The Effect of Nanosilicon Foliar Application on Morphological, Yield and Adjusment of Drought Stress in Quinoa Plant (Chenopodium quinoa L.)

Document Type : Research Paper

Authors

1 Head of Water, Soil and Natural Resources educational group/ Fars Agricultural and Natural Resources Research and Education Center

2 Assistant Professor, Fars Agricultural and Natural Resources Research and Education Center, AREEO, Shiraz, Iran

10.22034/saps.2023.57081.3064

Abstract

Background and Objective: The present study was conducted with aim of investigating the effect of nanosilicon on yield the performance and reducing the effect caused by water stress in Quinoa plant.

Materials and Methods: The experiment was conducted as split plot based on randomized complete blocks design with three replications in Fars Agricultural and Natural Resources Research and Education Center. The treatments included irrigation regimes in four rounds of 7, 14, 21 and 28 days and nanosilicon spraying at zero, 30 and 60 mg L-1 levels.

Results: Application of moderate moisture stress (irrigation cycle of 21 days) and severe (28 days) compared to no stress (7 days) caused a decrease of 5.93 and 24.65% in panicle length, 8.77 and 27.81% in panicle width, 5.14 and 29.44% in panicle number, 23.87 and 12.05% in total aerial organ weight, 24.73 and 54.95% in seed yield, 26.11 and 55.94% in the weight of one thousand seeds and 14.53 and 41.16% in the plant harvest index. The above moisture stresses caused a 125 and 78.84% increase in water consumption efficiency. Also, nanosilicon foliar has a significant effect on Quinoa plant growth, so that the maximum morphological growth, grain yield and water consumption efficiency observed in nanosilicon application with concentration 30 mg L-1 was.

Conclusion: Nanosilicon spraying with 30 mg L-1 concentration reduces the negative effects of moisture stress in drought stress conditions (21 and 28 days) on the Quinoa plant.

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Main Subjects

References

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JOURNAL OF AGRICULTURAL SCIENCE AND SUSTAINABLE PRODUCTION
Volume 34, Issue 3
October 2024
Pages 263-273

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